位置:首页 > IC中文资料 > BUL791

型号 功能描述 生产厂家 企业 LOGO 操作
BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

POINN

BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

TRSYS

Transys Electronics

BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W\n● hFE 6 to 22 at VCE = 1 V, IC = 2 A\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

POINN

BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W\n● hFE 6 to 22 at VCE = 1 V, IC = 2 A\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

BOURNS

伯恩斯

BUL791

NPN SILICON POWER TRANSISTOR

TRANSYS

BUL791

NPN SILICON POWER TRANSISTOR

文件:126.62 Kbytes Page:6 Pages

BOURNS

伯恩斯

POWER TRANSISTOR SILICON

NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation V

ONSEMI

安森美半导体

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

TRSYS

Transys Electronics

更新时间:2026-7-23 18:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/ON
22+
TO-220
18282
TI
24+
TO-220
6723
只做原装,欢迎询价,量大价优
ST/意法
23+
TO-220
94540
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST/ON
2022+
TO-220
12888
原厂代理 终端免费提供样品
TI
25+
TO-220
6723
全新现货
TI/德州仪器
0310+
QFN
3200
全新、原装
TI/德州仪器
23+
TO-220
50000
全新原装正品现货,支持订货
TI/德州仪器
24+
TO-220
80
只供应原装正品 欢迎询价
TI/德州仪器
2022+
35
全新原装 货期两周
TI/德州仪器
25+
N/A
20000
只做原装,只有原装。

BUL791数据表相关新闻