NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR

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IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer

GENERAL DESCRIPTION The ADG791A/ADG791G are monolithic CMOS devices comprising four 2:1 multiplexers/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation yet gives high switching speed and low on resistance. The on-resistance profi

ADJUSTABLE FLANGE DISTRIBUTOR ADJUSTMENT

文件：68.38 Kbytes Page：2 Pages

A-791M SPST N.O., 1000 Amps, 28 VDC, Cutout Reverse Current

文件：68.44 Kbytes Page：1 Pages