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BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

POINN

BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

TRSYS

Transys Electronics

BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W\n● hFE 6 to 22 at VCE = 1 V, IC = 2 A\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

POINN

BUL791

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W\n● hFE 6 to 22 at VCE = 1 V, IC = 2 A\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

BOURNS

伯恩斯

BUL791

NPN SILICON POWER TRANSISTOR

TRANSYS

BUL791

NPN SILICON POWER TRANSISTOR

文件:126.62 Kbytes Page:6 Pages

BOURNS

伯恩斯

POWER TRANSISTOR SILICON

NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation V

ONSEMI

安森美半导体

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

TRSYS

Transys Electronics

更新时间:2026-5-14 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
stm
23+
NA
346
专做原装正品,假一罚百!
STM
24+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
ST
24+
TO220ABNONISOL
8866
ST
22+
TO-220
12245
现货,原厂原装假一罚十!
STMicroelectronics
25+
N/A
12369
样件支持,可原厂排单订货!
ST
07+
TO-220
2010
全新 发货1-2天
ST/意法
24+
TO-220
39197
郑重承诺只做原装进口现货
ST
2511
TO-220
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
23+
TO-220
16900
正规渠道,只有原装!
ST
26+
SMT24
86720
全新原装正品价格最实惠 假一赔百

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