5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers

General Description The MAX770–MAX773 step-up switching controllers provide 90 efficiency over a 10mA to 1A load. A unique current-limited pulse-frequency-modulation (PFM) control scheme gives these devices the benefits of pulse-width-modulation (PWM) converters (high efficiency at heavy loads)

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：升压 包装：卷带（TR） 描述：IC REG CTRLR BOOST 8SOIC 集成电路（IC） PMIC - 稳压器 - DC DC 开关式控制器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：升压 包装：卷带（TR） 描述：IC REG CTRLR BOOST 8SOIC 集成电路（IC） DC-DC 开关控制器

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th