封装/外壳：48-WFQFN 裸露焊盘 包装：卷带（TR） 描述：IC AFE 8/10BIT 7.5MSPS 48-TQFN 集成电路（IC） 模拟前端（AFE）

封装/外壳：48-WFQFN 裸露焊盘 包装：管件 描述：IC AFE 4 CHAN 8/10BIT 48TQFN 集成电路（IC） 模拟前端（AFE）

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diod Features • DC / DC converter applications. • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • 2.5V drive. • [SBD] • Shor

8192 word x 8-bit High Speed CMOS Static RAM

Description CXK5863AP / AJ are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a singel 5V supply. These devices are suitable for use in high speed applications such as cash memory.

8192 word x 8-bit High Speed CMOS Static RAM

Description CXK5863AP / AJ are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a singel 5V supply. These devices are suitable for use in high speed applications such as cash memory.

8192 word x 8-bit High Speed CMOS Static RAM

Description CXK5863AP / AJ are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a singel 5V supply. These devices are suitable for use in high speed applications such as cash memory.

Relay Module

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