짹15kV ESD-Protected, 10Mbps, 3V/5V, Quad RS-422/RS-485 Receivers

General Description The MAX3095/MAX3096 are rugged, low-power, quad, RS-422/RS-485 receivers with electrostatic discharge (ESD) protection for use in harsh environments. All receiver inputs are protected to ±15kV using IEC 1000-4-2 Air-Gap Discharge, ±8kV using IEC 1000-4-2 Contact Discharge, and

±15kV ESD-Protected, 10Mbps, 3V/5V, Quad RS-422/RS-485 Receivers

文件：195.27 Kbytes Page：11 Pages

封装/外壳：16-DIP（0.300"，7.62mm） 包装：管件 描述：IC RECEIVER 0/4 16DIP 集成电路（IC） 驱动器，接收器，收发器

封装/外壳：16-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC RECEIVER 0/4 16DIP 集成电路（IC） 驱动器，接收器，收发器

±15kV ESD-Protected, 10Mbps, 3V/5V,, Quad RS-422/RS-485 Receivers

文件：198.46 Kbytes Page：11 Pages

NPN/PNP Transistor Arrays

Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit max

NPN/PNP Transistor Arrays

Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit max

NPN/PNP Transistor Arrays

Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit max

Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

Optoisolator Low LED Drive NPN Transistor Output

Description: The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as inter