封装/外壳：28-WFQFN 裸露焊盘 功能：RF 前置补偿器 包装：卷带（TR） 描述：IC RF PREDISTORTER ADJ QFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

1200MHz to 2500MHz Adjustable RF Predistorter

General Description The MAX2009 adjustable RF predistorter is designed to improve power amplifier (PA) adjacent-channel power rejection (ACPR) by introducing gain and phase expansion in a PA chain to compensate for the PA’s gain and phase compression. With its +23dBm maximum input power level and

封装/外壳：28-WFQFN 裸露焊盘 功能：RF 前置补偿器 包装：卷带（TR） 描述：IC RF PREDISTORT ADJ 28-TQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4400 V Mean forward current 1560 A Surge current 18.5 kA

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

10 10W STEREO AMPLIFIER

DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. ■ HIGH OUTPUT POWER (10 + 10W Min. @ D = 1) ■ HIGH CURRENT CAPABILITY (UP TO 3.5A) ■ AC SHORT CIRCUIT PRO