1- to 3-Cell, High-Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator

General Description The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in battery-powered wireless applications. They use a synchronous rectifier pulse-width-modulation (PWM) boost topology to g

1- to 3-Cell, High-Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator

General Description The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in battery-powered wireless applications. They use a synchronous rectifier pulse-width-modulation (PWM) boost topology to g

1- to 3-Cell, High-Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator

General Description The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in battery-powered wireless applications. They use a synchronous rectifier pulse-width-modulation (PWM) boost topology to g

1- to 3-Cell, High-Current, Low-Noise

文件：277.05 Kbytes Page：18 Pages

1- to 3-Cell, High-Current, Low-Noise

文件：277.05 Kbytes Page：18 Pages

Integrated Circuit VCR Hall Switch

Description: This device operates with a small permanent magnet and provides switching operation by increasing or decreasing the magnetic flux density. The device features operation on alternate magnetic field and a wide range of operating temperature.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

1.5/1.9GHz BAND FRONT-END GaAs MMIC

文件：564.26 Kbytes Page：26 Pages

High Speed Power Driver

文件：298.57 Kbytes Page：11 Pages