1W, High Isolation SIP, Single & Dual Output DC/DC Converters

Minmaxs MAU200 1W DC/DCs are specially designed to provide high levels of isolation 3000VDC in a miniature SIP package. Key Features • Efficiency up to 81 • 3000VDC Isolation • MTBF > 2,000,000 Hours • Low Cost • Input 5, 12 and 24VDC • Output 3.3,5,9,12,15,{5,{9,{12 and {15VDC • Temp

MAU200 Series 1 Watt Ultra Miniature High Isolation SIP DC/DC Single & Dual Output

Key Features ● SMT Technology ● Miniture Package ● I/O Isolation 3000 VDC ● Efficiency Up To 81 ● MTBF > 2,000,000 Hours ● Low Cost

SIP Package with Industry Standard Pinout

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DC/DC CONVERTER 1W,SIP-Package

DC/DC CONVERTER 1W SIP Package with Industry Standard Pinout

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丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD

SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac

SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available

Field Effect Transistor Dual Gate N-Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated