1W, High Isolation SIP, Single & Dual Output DC/DC Converters

Minmaxs MAU200 1W DC/DCs are specially designed to provide high levels of isolation 3000VDC in a miniature SIP package. Key Features • Efficiency up to 81 • 3000VDC Isolation • MTBF > 2,000,000 Hours • Low Cost • Input 5, 12 and 24VDC • Output 3.3,5,9,12,15,{5,{9,{12 and {15VDC • Temp

MAU200 Series 1 Watt Ultra Miniature High Isolation SIP DC/DC Single & Dual Output

Key Features ● SMT Technology ● Miniture Package ● I/O Isolation 3000 VDC ● Efficiency Up To 81 ● MTBF > 2,000,000 Hours ● Low Cost

1 Watt Miniature SIP High Isolation DC/DC Converter

The MINMAX MAU200 series is a range of 1W DC-DC converters in a small SIP Package featuring high I/O isolation of 3000VDC. An excellent efficiency allows an operating temperature range of –40℃ to +90℃. These converters offer an economical solution for many applications where a voltage has to be isol • \n\n• 工业标准SIP-7包装\n\n• 无稳压输出\n\n• 隔离耐压3000VDC\n\n• 工作环境温度范围 : -40℃至+90℃\n\n• 符合国际安规UL/cUL/IEC/EN 60950-1认证;

SIP Package with Industry Standard Pinout

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DC/DC CONVERTER 1W,SIP-Package

DC/DC CONVERTER 1W, SIP-Package, High Isolation

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DC/DC CONVERTER 1W SIP Package with Industry Standard Pinout

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.