1 Watt Miniature SIP DC/DC Converter

The MINMAX MAU100 series is a range of 1W DC-DC converters in a small SIP Package featuring I/O isolation of 1000VDC.An excellent efficiency allows an operating temperature range of –40℃ to +85℃. These converters offer an economical solution for many applications where a voltage has to be isolated i • \n\n• 工业标准SIP-7包装\n\n• 无稳压输出\n\n• 隔离耐压1000VDC\n\n• 工作环境温度范围 : -40℃至+85℃\n\n• 符合国际安规UL/cUL/IEC/EN 60950-1认证;

1 Watt Ultra Miniature SIP DC/DC Converters (Single and Dual Outputs)

文件：69.26 Kbytes Page：6 Pages

1W, Miniature SIP, Single & Dual Output DC/DC Converters

文件：217.15 Kbytes Page：6 Pages

DC/DC CONVERTER 1W SIP-Package with Industry Standard Pinout

文件：529.28 Kbytes Page：4 Pages

1 Watt Ultra Miniature SIP DC/DC Converters Single and Dual Outputs

文件：309.29 Kbytes Page：6 Pages

SIP Package with Industry Standard Pinout

文件：497.79 Kbytes Page：1 Pages

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package