Low Noise, Matched Dual Monolithic Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

Audio, Dual-Matched NPN Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

Audio, Dual-Matched NPN Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

封装/外壳：TO-78-6 金属罐 包装：卷带（TR） 描述：TRANS 2NPN 40V 0.02A TO78-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列