SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

Med. Barrier Si Ring Quad

The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, wh ·Extremely Low Parasitic Capacitance and Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits,;

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

Med. Barrier Si Ring Quad

The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, wh ·Extremely Low Parasitic Capacitance and Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits,;

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

封装/外壳：模具 包装：托盘 描述：HMIC SURMOUNT SCHOTTKY RING QUAD 分立半导体产品 二极管 - 射频

封装/外壳：模具 包装：托盘 描述：HMIC,SCH,SURMOUNT,MED BAR,RING Q 分立半导体产品 二极管 - 射频