Description

The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Features

Extremely Low Parasitic Capitance and Inductance

Surface Mountable in Microwave Circuits, No Wirebonds Required

Rugged HMIC Construction with Polyimide Scratch Protection

Reliable, Multilayer Metalization with a Diffusion Barrier, 100 Stabilization Bake (300 °C, 16 hours)

Lower Susceptibility to ESD Damage