Description

The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combi nation of silicon and glass allows HMIC devices to have excellent loss and power dissipation charac teristics in a low profile, reliable device.

Features

• Extremely Low Parasitic Capacitance and In ductance

• Surface Mountable in Microwave Circuits, No Wirebonds Required

• Rugged HMIC Construction with Polyimide Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion Barrier, 100 Stabilization Bake (300°C, 16 hours)

• Lower Susceptibility to ESD Damage