SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

Med. Barrier Si Single

The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Mi;

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed