MA4E2502价格
参考价格：￥12.5718
型号：MA4E2502L-1246 品牌：M/A-Com Technology Solut 备注：这里有MA4E2502多少钱，2026年最近7天走势，今日出价，今日竞价，MA4E2502批发/采购报价，MA4E2502行情走势销售排行榜，MA4E2502报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MA4E2502 | SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed | MACOM |   | |
MA4E2502 | SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | |
MA4E2502 | SURMOUNTTM Low, Medium, and High Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed | MA-COM | | |
MA4E2502 | SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes | MACOM | | |
SURMOUNTTM Low, Medium, and High Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed | MACOM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed | MACOM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
Low Barrier Si Single The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Mi; | MACOM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed | MACOM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
Med. Barrier Si Single The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Mi; | MACOM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto | MA-COM | | ||
封装/外壳：模具 包装：托盘 描述：RF DIODE SCHOTTKY 5V 50MW DIE 分立半导体产品 二极管 - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：模具 包装：托盘 描述：RF DIODE SCHOTTKY 5V 50MW DIE 分立半导体产品 二极管 - 射频 | ETC 知名厂家 | ETC | |
MA4E2502产品属性
- 类型
描述
- Vf(V)：
0.6500
- Vb：
3.00
- Total Capacitance(pF)：
0.120
- Dynamic Resistance(ohms)：
11.0
- Junction Capacitance(pF)：
0.120
- Package Category：
Surface Mount Die
- Package：
ODS-1246
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MACOM |
/ROHS.original |
NA |
10501 |
射频元件二极管-正纳电子/ 原材料及元器件 |
|||
M/A-COM |
24+ |
SMD |
5500 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
M/A-COM |
22+ |
NA |
1000 |
只做原装,价格优惠,长期供货。 |
|||
M/A-COM |
22+ |
NA |
20000 |
只做原装 品质保障 |
|||
M/A-COM |
25+ |
假一赔十 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
MACOM |
12+13+ |
SMD |
5935 |
全新 发货1-2天 |
|||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
M/A-COM |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
M/A-COM |
23+ |
2700 |
原厂原装正品 |
MA4E2502规格书下载地址
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