位置：首页 > IC中文资料第7878页 > MA4E2502H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MA4E2502H | SURMOUNTTMLow,MediumandHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SurMountTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottkyDevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process.HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconductorsembed | MACOMTyco Electronics 玛科姆技术方案控股有限公司 |  |   |
MA4E2502H | SURMOUNTTMLow,Medium,andHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto | MA-COM M/A-COM Technology Solutions, Inc. |  | |
SURMOUNTTMLow,Medium,andHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto | MA-COM M/A-COM Technology Solutions, Inc. | | | |
SURMOUNTTMLow,Medium,andHigh DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottkyDevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process.HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconductorsembed | MA-COM M/A-COM Technology Solutions, Inc. | | | |
SURMOUNTTMLow,MediumandHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SurMountTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottkyDevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process.HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconductorsembed | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | | |
SURMOUNTTMLow,Medium,andHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto | MA-COM M/A-COM Technology Solutions, Inc. | | | |
SURMOUNTTMLow,Medium,andHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto | MA-COM M/A-COM Technology Solutions, Inc. | | | |
SURMOUNTTMLow,Medium,andHighBarrierSiliconSchottkyDiodes DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto | MA-COM M/A-COM Technology Solutions, Inc. | | | |
封装/外壳：模具 包装：托盘 描述：RF DIODE SCHOTTKY 5V 50MW DIE 分立半导体产品 二极管 - 射频 | ETC 知名厂家 | ETC | |
MA4E2502H产品属性
- 类型
描述
- 型号
MA4E2502H
- 制造商
MA-COM
- 制造商全称
M/A-COM Technology Solutions, Inc.
- 功能描述
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM |
24+ |
原装原封 |
25000 |
##公司100%原装现货,假一罚十!可含税13%免费提供样品支持 |
|||
MA/COM |
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
|||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
M/A-COM |
24+ |
SMD |
5500 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
M/A-COM |
23+ |
NA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
M/A-COM |
2308+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
|||
N/A |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
M/A-COM |
20+ |
NA |
1000 |
全新原装现货,一片也是批量价。 |
|||
MACOM |
/ROHS.original |
NA |
10501 |
射频元件二极管-正纳电子/ 原材料及元器件 |
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MA4E2502H规格书下载地址
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DdatasheetPDF页码索引
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