Aerospace & Defense Speed Sensors

High Temperature VRS Sensor, Sealed Front-End, 6,4 mm [0.250 in] diameter, 5.2 Vp-p, -73 ºC to 230 ºC [-100 ºF to 450 ºF], 36 DP (module 0.70) or coarser, 70 kHz, 25 mm [1.00 in] approx. length.High Temperature VRS sensors are designed for use in applications where the sensor is exposed to temperatu ·Self-powered operation \n·Direct conversion of actuator speed to output frequency \n·Simple installation \n·No moving parts \n·Designed for use over a wide range of speeds \n·Adaptable to a wide variety of configurations \n·Customized VRS products for unique speed sensing applications \n·Housing di;

封装/外壳：不锈钢套管 包装：散装 描述：SENSOR VRS SINE WAVE WIRE LEADS 传感器，变送器 磁性传感器 - 位置，接近，速度（模块）

MA3055S10 - 磁性速度传感器, VRS, 高温 -73°C 至 +230°C

The MA3055S10 is a high output VRS magnetic Speed Sensor, designed for use in applications where the sensor is exposed to temperatures up to 260°C (450°F). Sealed front-end version is available for applications where the sensor is exposed to fluids, lubricants or adverse environmental conditions. Th ·Self-powered operation\n·Direct conversion of actuator speed to output frequency\n·Simple installation\n·No moving parts\n·Adaptable to a wide variety of configurations\n·Threaded stainless steel housing\n·5.2Vp-p minimum output voltage (peak to peak)\n·70kHz operating frequency\n·0.89m/s surface s;

封装/外壳：不锈钢套管 包装：盒 描述：SENSOR VRS SINE WAVE WIRE LEADS 传感器，变送器 磁性传感器 - 位置，接近，速度（模块）

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955