64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

SUMMARY DESCRIPTION The M69KB096AA is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 words by 16 bits. The memory array is implemented using a one transistor-per-cell topology, to achieve bigger array sizes. This device is a high-speed CMOS, dynamic random-access memory. It provides a

64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

SUMMARY DESCRIPTION The M69KB096AA is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 words by 16 bits. The memory array is implemented using a one transistor-per-cell topology, to achieve bigger array sizes. This device is a high-speed CMOS, dynamic random-access memory. It provides a

64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

SUMMARY DESCRIPTION The M69KB096AA is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 words by 16 bits. The memory array is implemented using a one transistor-per-cell topology, to achieve bigger array sizes. This device is a high-speed CMOS, dynamic random-access memory. It provides a

64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

Summary description The M69KB096AB is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-per-cell topology that achieves bigger array sizes. It provides a high-density solution for low-power handh