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位置：首页 > IC中文资料第6676页 > M638

型号 功能描述 生产厂家&企业 LOGO 操作
M63800FP

7-UNIT500mASOURCETYPEDARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63800FPisaseven-circuitoutput-sourcingDarlingtontransistorarray.ThecircuitsaremadeofPNPandNPNtransistors.Thissemiconductorintegratedcircuitperformshigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63804FP

7-UNIT300mATRANSISTORARRAY

DESCRIPTION M63804P,M63804FP,M63804GPandM64804KPareseven-circuitSingetransistorarrays.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES ●Fourpackageconfigurations(P,FP

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63804GP

7-UNIT300mATRANSISTORARRAY

DESCRIPTION M63804P,M63804FP,M63804GPandM64804KPareseven-circuitSingetransistorarrays.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES ●Fourpackageconfigurations(P,FP

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63804KP

7-UNIT300mATRANSISTORARRAY

DESCRIPTION M63804P,M63804FP,M63804GPandM64804KPareseven-circuitSingetransistorarrays.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES ●Fourpackageconfigurations(P,FP

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63804P

7-UNIT300mATRANSISTORARRAY

DESCRIPTION M63804P,M63804FP,M63804GPandM64804KPareseven-circuitSingetransistorarrays.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES ●Fourpackageconfigurations(P,FP

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63812FP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63812GP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63812KP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63812P

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63814FP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63814P/FP/GP/KPareseven-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackageconfigurations(P,FP,

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63814GP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63814P/FP/GP/KPareseven-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackageconfigurations(P,FP,

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63814KP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63814P/FP/GP/KPareseven-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackageconfigurations(P,FP,

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63814P

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63814P/FP/GP/KPareseven-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackageconfigurations(P,FP,

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63815FP

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63815P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63815KP

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63815P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63815P

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63815P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63817FP

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63817P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63817KP

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63817P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63817P

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63817P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63820FP

8-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63820FP/KP8-channelsinkdriver,consistsof16NPNtransistorsconnectedtofromeighthighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●Withclampingdiodes ●3Vmicrocomputerseriescompatibleinput

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63820KP

8-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63820FP/KP8-channelsinkdriver,consistsof16NPNtransistorsconnectedtofromeighthighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●Withclampingdiodes ●3Vmicrocomputerseriescompatibleinput

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63824GP

7-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63824GP/KP7-channelsinkdriver,consistsof14NPNtransistorsconnectedtofromsevenhighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●Withclampingdiodes ●3Vmicrocomputerseriescompatibleinput

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63824KP

7-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63824GP/KP7-channelsinkdriver,consistsof14NPNtransistorsconnectedtofromsevenhighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●Withclampingdiodes ●3Vmicrocomputerseriescompatibleinput

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63826FP

7-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION M63826P,M63826FPandM63826GPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemi-conductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. Productionlineuphasbeenn

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63826GP

7-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION M63826P,M63826FPandM63826GPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemi-conductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. Productionlineuphasbeenn

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63826P

7-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION M63826P,M63826FPandM63826GPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemi-conductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. Productionlineuphasbeenn

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63827DP

7-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63827WPandM63827DPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES ●Twopackageconfigurations

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63827WP

7-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63827WPandM63827DPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES ●Twopackageconfigurations

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63828DP

7-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63828WPandM63828DPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES Twopackageconfigu

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63828WP

7-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63828WPandM63828DPareseven-circuitDarlingtontransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES Twopackageconfigu

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63830FP

4-UNIT1.5ADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63830P/FP4-channelsinkdriver,consistsof4PNPand8NPNtransistorsconnectedtofromfourhighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=1.5A) ●3Vmicrocomputerseriescompatibleinput ●Withclamping

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63830P

4-UNIT1.5ADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63830P/FP4-channelsinkdriver,consistsof4PNPand8NPNtransistorsconnectedtofromfourhighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=1.5A) ●3Vmicrocomputerseriescompatibleinput ●Withclamping

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63832GP

7-UNIT500mADARLINGTONTRANSISTOR-ARRAY

DESCRIPTION TheM63832GP/KP7-channelsinkdriver,consistsof7PNPand14NPNtransistorsconnectedtofromsevenhighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●3Vmicrocomputercompatibleinput ●“L”activelevel

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63832KP

7-UNIT500mADARLINGTONTRANSISTOR-ARRAY

DESCRIPTION TheM63832GP/KP7-channelsinkdriver,consistsof7PNPand14NPNtransistorsconnectedtofromsevenhighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●3Vmicrocomputercompatibleinput ●“L”activelevel

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63836FP

8-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63836FP/KP8-channelsinkdriver,consistsof8PNPand16NPNtransistorsconnectedtofromeighthighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●3Vmicrocomputercompatibleinput ●“L”activelevel

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63836KP

8-UNIT500mADARLINGTONTRANSISTOR-ARRAYWITHCLAMPDIODE

DESCRIPTION TheM63836FP/KP8-channelsinkdriver,consistsof8PNPand16NPNtransistorsconnectedtofromeighthighcurrentgaindriverpairs. FEATURES ●Highbreakdownvoltage(BVCEO≥50V) ●High-currentdriving(IC(max)=500mA) ●3Vmicrocomputercompatibleinput ●“L”activelevel

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63840FP

8-Unit500mASourceTypeDarlingtonTransistor-ArrayWithClampDiode

DESCRIPTION M63840P/FP/KPareeight-circuitoutput-sourcingDarlingtontransistorarray.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Highbreakdownvoltage（BVCEO≧4

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63840FP

8-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODESOURCETYPE

DESCRIPTION M63840P/FP/KPareeight-circuitoutput-sourcingDarlingtontransistorarray.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Highbreakdownvoltage（BVCEO≧4

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63840KP

8-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODESOURCETYPE

DESCRIPTION M63840P/FP/KPareeight-circuitoutput-sourcingDarlingtontransistorarray.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Highbreakdownvoltage（BVCEO≧4

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63840KP

8-Unit500mASourceTypeDarlingtonTransistor-ArrayWithClampDiode

DESCRIPTION M63840P/FP/KPareeight-circuitoutput-sourcingDarlingtontransistorarray.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Highbreakdownvoltage（BVCEO≧4

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63840P

8-Unit500mASourceTypeDarlingtonTransistor-ArrayWithClampDiode

DESCRIPTION M63840P/FP/KPareeight-circuitoutput-sourcingDarlingtontransistorarray.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Highbreakdownvoltage（BVCEO≧4

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63850FP

4-UNIT1.5ADMOSARRAYWITHCLAMPDIODE

DESCRIPTION TheM63850P/FPisainverterinputpowerDMOStransistorarraythatconsistsof4independentoutputN-channelDMOStransistors. FEATURES ●4circuitsofN-channelsDMOS ●Highbreakdownvoltage(VDS≥80V) ●High-currentdriving(IDS(max)=1.5A) ●Withclampingdiodes ●Drain-

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63850P

4-UNIT1.5ADMOSARRAYWITHCLAMPDIODE

DESCRIPTION TheM63850P/FPisainverterinputpowerDMOStransistorarraythatconsistsof4independentoutputN-channelDMOStransistors. FEATURES ●4circuitsofN-channelsDMOS ●Highbreakdownvoltage(VDS≥80V) ●High-currentdriving(IDS(max)=1.5A) ●Withclampingdiodes ●Drain-

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63802FP

7-UNIT300mATRANSISTORARRAY

文件：60.97 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63802GP

7-UNIT300mATRANSISTORARRAY

文件：60.97 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63802KP

7-UNIT300mATRANSISTORARRAY

文件：60.97 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63802P

7-UNIT300mATRANSISTORARRAY

文件：60.97 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63803FP

7-UNIT300mATRANSISTORARRAY

文件：60.31 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63803GP

7-UNIT300mATRANSISTORARRAY

文件：60.31 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63803KP

7-UNIT300mATRANSISTORARRAY

文件：60.31 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63803P

7-UNIT300mATRANSISTORARRAY

文件：60.31 Kbytes Page：4 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63805FP

8-UNIT300mATRANSISTORARRAY

文件：69.66 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63805KP

8-UNIT300mATRANSISTORARRAY

文件：69.66 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63805P

8-UNIT300mATRANSISTORARRAY

文件：69.66 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63806FP

8-UNIT300mATRANSISTORARRAY

文件：69.59 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63806KP

8-UNIT300mATRANSISTORARRAY

文件：69.59 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63806P

8-UNIT300mATRANSISTORARRAY

文件：69.59 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63807FP

8-UNIT300mATRANSISTORARRAY

文件：67.76 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63807KP

8-UNIT300mATRANSISTORARRAY

文件：67.76 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M63807P

8-UNIT300mATRANSISTORARRAY

文件：67.76 Kbytes Page：5 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

M638产品属性

  • 类型

    描述

  • 型号

    M638

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

M638供应商更多...

更新时间：2025-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
M63806FP
MITSUBISH
24+
NA/
3702
原装现货,当天可交货,原型号开票
询价
千层芯半导体(深圳)有限公司
M63806FP
MITSUBISH
24+
SOP
30617
一级代理全新原装热卖
询价
深圳市威雅利发展有限公司
M63806FP
MITSUBISHI
02+
SOP-20L
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科恒伟业电子有限公司
M63806K
MIT
2450+
6
6540
原装现货或订发货1-2周
询价
深圳市明嘉莱科技有限公司
M63804P
MITSUBISHI/三菱
25+
SOP
880000
明嘉莱只做原装正品现货
询价
深圳市拓亿芯电子有限公司
M63806FP
MITSUBISHI/三菱
23+
SOP-20L
9800
全新原装现货,假一赔十
询价
贸泽芯城（深圳）电子科技有限公司
M63804P
MITSUBISHI/三菱
23+
SOP
8000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市赛美科科技有限公司
M63804P
MIT
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市安富世纪电子有限公司
M63806FP
MITSUBISHI
23+
SOP-20L
50000
全新原装正品现货,支持订货
询价
深圳市勤思达科技有限公司
M63804P
三菱
100
原装现货,价格优惠
询价

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