M611x Series 5 x 7 mm, 3.0, 3.3 & 5.0 Volt, HCMOS or Clipped Sinewave, Precision TCXO/TCVTCXO

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Isolation Voltage 3750 Vrms 1ch Gate Driver Providing Galvanic Isolation

General Description BM6112FV-C is a gate driver with isolation voltage of 3750 Vrms, I/O delay time of 150 ns, and incorporates fault signal output function, ready signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP) function, active miller clamping fu

Industrial Rectifier, 500 Amp

Industrial Rectifier, 500 Amp Electrical Characteristics: (Maximum Values @ TJ = +190°C unless otherwise specified) Peak Forward Voltage Drop (IFM = 500A), VFM . . . . . . . . . . . . . . . . 1.4V Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . 0.8V

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.