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UN6112晶体管资料

  • UN6112别名:UN6112三极管、UN6112晶体管、UN6112晶体三极管

  • UN6112生产厂家:日本松下公司

  • UN6112制作材料:Ge-P+R

  • UN6112性质:开关管 (SW)_数字电路用 (Digi)

  • UN6112封装形式:直插封装

  • UN6112极限工作电压:50V

  • UN6112最大电流允许值:0.1A

  • UN6112最大工作频率:<1MHZ或未知

  • UN6112引脚数:3

  • UN6112最大耗散功率:0.4W

  • UN6112放大倍数

  • UN6112图片代号:A-68

  • UN6112vtest:50

  • UN6112htest:999900

  • UN6112atest:0.1

  • UN6112wtest:0.4

  • UN6112代换 UN6112用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
UN6112

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

PANASONIC

松下

Isolation Voltage 3750 Vrms 1ch Gate Driver Providing Galvanic Isolation

General Description BM6112FV-C is a gate driver with isolation voltage of 3750 Vrms, I/O delay time of 150 ns, and incorporates fault signal output function, ready signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP) function, active miller clamping fu

ROHM

罗姆

Industrial Rectifier, 500 Amp

Industrial Rectifier, 500 Amp Electrical Characteristics: (Maximum Values @ TJ = +190°C unless otherwise specified) Peak Forward Voltage Drop (IFM = 500A), VFM . . . . . . . . . . . . . . . . 1.4V Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . 0.8V

NTE

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

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