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M6013

HEYbrid™ Stainless Steel Liquid Tight Cordgrips

文件:307.82 Kbytes Page:1 Pages

HEYCO

包装:散装 描述:HANDLE ALUMINUM MTG CTR 2.008\ 盒子,外壳,机架 手柄

RAF

包装:散装 描述:HANDLE ALUM BLACK MTG CTR 2.008\ 盒子,外壳,机架 手柄

RAF

Tite Solar Masthead®Metal Liquid Tight Cordgrips

文件:125.13 Kbytes Page:1 Pages

HEYCO

Tite Solar Masthead®Metal Liquid Tight Cordgrips

文件:125.13 Kbytes Page:1 Pages

HEYCO

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

ADPOW

Silicon Industrial Rectifier 20 Amp

Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add

NTE

更新时间:2026-8-2 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MTRONPTI
23+
OCXO
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MTRONPTI
25+
OCXO
880000
明嘉莱只做原装正品现货

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