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型号	功能描述	生产厂家企业	LOGO
M5M5V208AKR	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208A is a family of low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by Mitsubishis high performance 0.25µm CMOS technology. The M5M5V208A is suitable for memory applications where a simple interfacing , battery operating and battery backup are	Mitsubishi 三菱电机	Mitsubishi
M5M5V208AKV	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208A is a family of low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by Mitsubishis high performance 0.25µm CMOS technology. The M5M5V208A is suitable for memory applications where a simple interfacing , battery operating and battery backup are	Mitsubishi 三菱电机	Mitsubishi
M5M5V208AKV	2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V208AKV is low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by high-performance 0.25µm CMOS technology. The M5M5V208AKV is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design	RENESAS 瑞萨	RENESAS
M5M5V208AKV-55HI	2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V208AKV is low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by high-performance 0.25µm CMOS technology. The M5M5V208AKV is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design	RENESAS 瑞萨	RENESAS
M5M5V208AKV-70HI	2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V208AKV is low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by high-performance 0.25µm CMOS technology. The M5M5V208AKV is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design	RENESAS 瑞萨	RENESAS
M5M5V208FP-10L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-10LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-10LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-10L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-12L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-12LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-12LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-12L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-70L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-70LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-70LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-70L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-85L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-85LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-85LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208FP-85-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-10L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-10LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-10LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-10L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-12L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-12LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-12LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-12L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-70L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-70LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-70LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-70L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-85L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-85LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-85LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KR-85-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-10L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-10LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-10LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-10L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-12L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-12LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-12LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-12L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-70L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-70LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-70LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-70L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-85L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-85LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-85LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208KV-85-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-10L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-10LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-10LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-10L-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-12L	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-12LL	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi
M5M5V208RV-12LL-W	2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow	Mitsubishi 三菱电机	Mitsubishi

M5M5V208产品属性

类型
描述
型号
M5M5V208
制造商
MITSUBISHI
制造商全称
Mitsubishi Electric Semiconductor
功能描述
2097152-BIT(262144-WORD BY 8-BIT) CMOS STATIC RAM

M5M5V208供应商更多...

更新时间：2025-12-30 17:49:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	M5M5V216ATP-55HI#BT	RENESAS	21+	TSOP44	1321	只做原装,一定有货,不止网上数量,量多可订货!	询价
深圳市诺美思科技有限公司	M5M5V216ATP-55HI	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市得捷芯城科技有限公司	M5M5V216ATP-55HI	RENESAS/瑞萨	24+	NA/	13505	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳诚思涵科技有限公司	M5M5V216ATP-55HI	RENESAS	16+	BGA	4000	进口原装现货/价格优势!	询价
深圳市赛美科科技有限公司	M5M5V216ATP-55HI	MITSUBISH		NA	5650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市振宏微科技有限公司	M5M5V216ATP-55HI	MITSUBISHI	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价
深圳市星佑电子有限公司	M5M5V2132GP-7	MIT	06+	原厂原装	4308	只做全新原装真实现货供应	询价
深圳市宏捷佳电子科技有限公司	M5M5V216ATP-55HI	RENESAS	25+	BGA	6500	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市拓亿芯电子有限公司	M5M5V216ATP-55HI	RENESAS	25+	TSOP44	30000	代理全新原装现货,价格优势	询价
深圳市科翼源电子有限公司	M5M5V216ATP-55HI#BT	RENESAS	23+	TSOP44	2589	原厂原装正品	询价

M5M5V208芯片相关品牌

M5M5V208规格书下载地址

M5M5V208参数引脚图相关

M5M5V208数据表相关新闻

M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M62342HP
https://hch01.114ic.com/
2020-11-13
M61880FP
https://hch01.114ic.com/
2020-11-13
M5677-ALAA 进口原装，主营军工级IC
M5677-ALAA ALI，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-13
M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SA L108B，M62216FP，M62339FP
2020-1-7

DdatasheetPDF页码索引

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M5M5V208产品属性

M5M5V208供应商更多...

M5M5V208芯片相关品牌

M5M5V208规格书下载地址

M5M5V208参数引脚图相关

M5M5V208数据表相关新闻

M5836

M5838

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引