位置：首页 > IC中文资料第5660页 > M5M5V108DKV
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M5M5V108DKV | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | RENESAS 瑞萨 |   | |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | RENESAS 瑞萨 | | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | Mitsubishi 三菱电机 | | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | RENESAS 瑞萨 | | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | RENESAS 瑞萨 | | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | RENESAS 瑞萨 | | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and lo | RENESAS 瑞萨 | |
M5M5V108DKV产品属性
- 类型
描述
- 型号
M5M5V108DKV
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
1856 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
2025+ |
TSOP32 |
1000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS/瑞萨 |
24+ |
TSOP32 |
21574 |
郑重承诺只做原装进口现货 |
|||
MIT |
24+ |
TSSOP32 |
40 |
||||
RENESAS/瑞萨 |
2447 |
TSOP32 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
22+ |
TSOP32 |
20000 |
公司只做原装 品质保证 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RENESAS |
24+ |
TSOP32 |
16900 |
原装正品现货支持实单 |
|||
RENESAS/瑞萨 |
23+ |
TSOP32 |
8160 |
原厂原装 |
|||
RENESAS |
11+ |
TSOP32 |
2486 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
M5M5V108DKV规格书下载地址
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DdatasheetPDF页码索引
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