1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de