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位置：首页 > IC中文资料第9596页 > M5M29GB

型号 功能描述 生产厂家&企业 LOGO 操作
M5M29GB160BVP

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB160BVP

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB160BWG

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB160BWG

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB161BVP

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB161BVP

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB161BWG

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB161BWG

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult

Mitsubishi

三菱电机

M5M29GB320VP

33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

文件：72.51 Kbytes Page：3 Pages

RENESAS

瑞萨

M5M29GB320VP-80

33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

文件：72.51 Kbytes Page：3 Pages

RENESAS

瑞萨

M5M29GB320WG

33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

文件：89.87 Kbytes Page：3 Pages

RENESAS

瑞萨

M5M29GB640C3BTC-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BTC-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BTI-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BTI-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BXAC-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BXAC-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BXAI-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3BXAI-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TTC-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TTC-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TTI-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TTI-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TXAC-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TXAC-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TXAI-12

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640C3TXAI-90

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29GB640VP

3.3V ONLY FLASHMEMORY

文件：635.82 Kbytes Page：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M5M29KB

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

文件：285.14 Kbytes Page：32 Pages

RENESAS

瑞萨

M5M29GB产品属性

  • 类型

    描述

  • 型号

    M5M29GB

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    16,777,216-BIT(1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

M5M29GB供应商更多...

更新时间：2025-8-9 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市胜彬电子有限公司
M5M29GT161BWG
MITSUBIS
22+
BGA
3000
原装正品,支持实单
询价
深圳市正纳电子有限公司
M5M29GT320
Mitsubishi Electric (三菱)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市科恒伟业电子有限公司
M5M29GT320VP-80
MTSUBISHI
1836+
TSOP48
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市恒创达实业有限公司
M5M29GT320VP-80
MIT
17+
TSOP
6200
100%原装正品现货
询价
贸泽芯城（深圳）电子科技有限公司
M5M29GB320VP-80
三凌
23+
TSOP48
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
齐创科技(上海,北京,青岛)有限公司
M5M29GT161BWG
MIT
23+
BGA
5000
原装正品,假一罚十
询价
深圳市一线半导体有限公司
M5M29GB320VP-MP
24+
SOP48
7003
询价
艾睿（深圳）半导体有限公司
M5M29GB320VP-80
三凌
2447
TSOP48
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
上海鑫科润电子科技有限公司
M5M29GT320VP-80
RENESAS
2004+
TSOP
844
原装现货海量库存欢迎咨询
询价
深圳市亿联芯电子科技有限公司
M5M29GB320VP-MP
RENESAS/瑞萨
2023+
TSOP48
8635
一级代理优势现货,全新正品直营店
询价

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