位置：首页 > IC中文资料第9596页 > M5M29GB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 |   | ||
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult | Mitsubishi 三菱电机 | | ||
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi 三菱电机 | | ||
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | RENESAS 瑞萨 | | ||
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 文件：72.51 Kbytes Page：3 Pages | RENESAS 瑞萨 | | ||
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 文件：72.51 Kbytes Page：3 Pages | RENESAS 瑞萨 | | ||
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 文件：89.87 Kbytes Page：3 Pages | RENESAS 瑞萨 | | ||
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | RENESAS 瑞萨 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3.3V ONLY FLASHMEMORY 文件：635.82 Kbytes Page：42 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 文件：285.14 Kbytes Page：32 Pages | RENESAS 瑞萨 | |
M5M29GB产品属性
- 类型
描述
- 型号
M5M29GB
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
16,777,216-BIT(1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2023+ |
TSOP48 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
MIT |
TSOP48 |
24 |
全新原装进口自己库存优势 |
||||
三凌 |
24+ |
TSOP |
7000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
4126 |
原装现货,当天可交货,原型号开票 |
|||
MIT |
2016+ |
TSOP |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
MITSUBIS |
20+ |
TSSOP |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
MTSUBISH |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MITSUBISHI |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
2023+ |
TSOP48 |
8635 |
一级代理优势现货,全新正品直营店 |
M5M29GB芯片相关品牌
M5M29GB规格书下载地址
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DdatasheetPDF页码索引
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