型号 功能描述 生产厂家 企业 LOGO 操作
M59MR032DZC

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

M59MR032DZC产品属性

  • 类型

    描述

  • 型号

    M59MR032DZC

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

更新时间:2026-1-29 19:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
04+
DIP42
10961
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
原厂封装
9800
原装进口公司现货假一赔百
ST/意法
2450+
DIP-42
9850
只做原厂原装正品现货或订货假一赔十!
ST
25+
SOP
4500
全新原装、诚信经营、公司现货销售!
ST
23+
SOP
3600
绝对全新原装!现货!特价!请放心订购!
ST/意法
22+
DIP-42
3000
原装正品,支持实单
MICROCHIP/微芯
24+
SOP-24
7671
原装正品.优势专营
ST
02+
DIP-42
33
ST
DIP42
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
04+
DIP/42
105
原装现货海量库存欢迎咨询

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