位置：首页 > IC中文资料第10026页 > M59DR032EB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR032EB | 32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M59DR032EB产品属性
- 类型
描述
- 型号
M59DR032EB
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
32 Mbit(2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2020+ |
SOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST/STMicroelectronics/意法半导 |
21+ |
SOP |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
5 |
SOP |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2016+ |
SOP |
6528 |
只做进口原装现货!假一赔十! |
|||
ST |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
||||
ST |
22+ |
SOP |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
20+ |
SOP |
25000 |
全新原装现货,假一赔十 |
|||
ST |
22+23+ |
SOP |
22004 |
绝对原装正品全新进口深圳现货 |
|||
ST |
2231+ |
BGA |
3414 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
ST |
23+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售! |
M59DR032EB芯片相关品牌
M59DR032EB规格书下载地址
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DdatasheetPDF页码索引
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