32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.