16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh

Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805

2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5117805C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117805C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5117805D is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117805D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal