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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 |   | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | |
M50FLW040产品属性
- 类型
描述
- 型号
M50FLW040
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4-Mbit(5 】 64 Kbyte blocks + 3 】 16 】 4 Kbyte sectors) 3-V supply Firmware Hub/low-pin count Flash memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3376 |
原装现货,当天可交货,原型号开票 |
|||
ST |
1833+ |
PLCC32 |
312 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
24+ |
PLCC32 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
25+ |
PLCC |
2789 |
原装优势!绝对公司现货! |
|||
ST |
25+23+ |
PLCC32 |
32586 |
绝对原装正品全新进口深圳现货 |
|||
ST |
PLCC32 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
26+ |
TSOP |
60000 |
只有原装 可配单 |
|||
QFN |
23+ |
UPI |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
24+ |
PLCC |
6980 |
原装现货,可开13%税票 |
|||
ST |
25+ |
TSOP |
16900 |
原装，请咨询 |
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M50FLW040规格书下载地址
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M50FLW040数据表相关新闻
M4Z28-BR00SH1 电子电池
TLV3601DBVT 01M1002FF M4Z28-BR00SH1 STM32C011F4P6
2023-6-8M50-3300842
优势库存
2022-8-5M50-3530442
M50-3530442
2022-6-27M5216FP CFOJ
https://hch01.114ic.com/
2020-11-13M51995AFP#CF0J，M51V17400D-10，M52018FP，M5203A1，M5203FP
M51995AFP#CF0J，M51V17400D-10，M52018FP，M5203A1，M5203FP
2020-3-9M51995AFP
M51995AFP，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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