| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M50FLW040B | 4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 |   | |
M50FLW040B | 4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | |
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC FLASH 4MBIT PARALLEL 40TSOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
IC FLASH 4M PARALLEL 40TSOP | MICRON 美光 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：32-TFSOP（0.488"，12.40mm 宽） 包装：托盘 描述：IC FLASH 4MBIT PARALLEL 32TSOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
IC FLASH 4M PARALLEL 32TSOP | MICRON 美光 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
IC FLASH 4M PARALLEL 32TSOP | MICRON 美光 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4-Mbit (5 횞 64 Kbyte blocks 3 횞 16 횞 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory 文件：534.28 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | |
M50FLW040B产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
4Mb （512K x 8）
- 时钟频率：
33MHz
- 访问时间：
250ns
- 存储器接口：
并联
- 电压 - 电源：
3V ~ 3.6V
- 工作温度：
-20°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
32-LCC（J 形引线）
- 供应商器件封装：
32-PLCC（11.35x13.89）
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron Technology Inc. |
21+ |
32-LCC(J 形引线) |
640 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ST |
25+23+ |
PLCC-32 |
35749 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
24+ |
PLCC-32 |
9600 |
原装现货,优势供应,支持实单! |
|||
ST/意法 |
23+ |
PLCC32 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Micron |
23+ |
40TSOP (10x20) |
8000 |
只做原装现货 |
|||
Micron Technology Inc. |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
ST/意法 |
23+ |
PLCC32 |
50000 |
全新原装正品现货,支持订货 |
|||
Micron |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ST |
03+ |
PLCC-32 |
48 |
原装现货海量库存欢迎咨询 |
|||
Micron |
22+ |
32TSOP (8x14) |
9000 |
原厂渠道,现货配单 |
M50FLW040B规格书下载地址
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M51995AFP，全新原装当天发货或门市自取0755-82732291.
2019-11-14
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