位置：首页 > IC中文资料第1487页 > M50F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
5,000 V - 16,000 V Rectifiers 5,000 V - 16,000 V Rectifiers 10 mA - 40 mA Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 |   | ||
Spice Model 5,000 V - 16,000 V Rectifiers 10 mA - 40 mA Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | VMI | | ||
5,000 V - 16,000 V Rectifiers 5,000 V - 16,000 V Rectifiers 10 mA - 40 mA Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
5,000 V - 16,000 V Rectifiers 5,000 V - 16,000 V Rectifiers 10 mA - 40 mA Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
2,500 V - 16,000 V Rectifiers 10 mA - 100 mA Forward Current 200 ns Recovery Time High Voltage Diodes - Axial Lead 10mA - 100mA • 200ns • Hermetic | VMI | | ||
HIGH VOLTAGE RECTIFIERS HIGH VOLTAGE RECTIFIERS • 100ns-200ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH VOLTAGE RECTIFIERS HIGH VOLTAGE RECTIFIERS • 100ns-200ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca | STMICROELECTRONICS 意法半导体 | |
M50F产品属性
- 类型
描述
- 型号
M50F
- 制造商
Harwin
- 功能描述
HEADER STRT 2 ROW 50WAY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
217 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
08+ |
PLCC |
217 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
PLCC-32 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
25+ |
PLCC-32 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
PLCC32 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VMI |
2022+ |
DIP |
8000 |
只做原装支持实单,有单必成。 |
|||
VMI |
25+ |
18000 |
一级代理保证进口原装正品假一罚十价格合理 |
||||
VMI |
23+ |
DIP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TI |
24+ |
QFN |
6980 |
原装现货,可开13%税票 |
|||
ST/意法 |
2402+ |
PLCC32 |
8324 |
原装正品!实单价优! |
M50F芯片相关品牌
M50F规格书下载地址
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- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- M5123
- M5122
- M51209P
- M51209
- M51207L
- M51207
- M51205
- M51203
- M51162P
- M51162
- M51132L
- M51131L
- M5109
- M5106
- M50UFG
- M50SG
- M50FLW040AK5TP
- M50FLW040AK5TG
- M50FLW040AK5T
- M50FLW040AK5P
- M50FLW040AK5G
- M50FLW040AK5
- M50FLW040AK1TP
- M50FLW040AK1TG
- M50FLW040AK1T
- M50FLW040AK1P
- M50FLW040AK1G
- M50FLW040AK1
- M50FLW040A_06
- M50FLW040A
- M50FG
- M50FFX
- M50FF5
- M50FF3
- M50F3601022
- M50F3502522
- M50D
- M50-CABLE
- M50-C90XSMD
- M50C108507CR-25
- M50C108507CR-06
- M50C108507CR-05
- M50C108069C
- M50C_15
- M50C
- M50-BATT-TRAY
- M50-AC
- M50AC
- M50A_15
- M50A
- M5097
- M50964-XXXSP
- M50964-PGYS
- M50963-XXXSP
- M50963MS9AC
- M50963E-XXXSP
- M50963E-XXXFP
- M50963ES
- M50957
- M50955
- M50954
- M50940
- M50932
- M50931
- M50930
- M50754
- M50747
- M50743
- M5060
- M505085
- M505084
- M505083
- M505082
- M505081
- M505075
M50F数据表相关新闻
M4Z28-BR00SH1 电子电池
TLV3601DBVT 01M1002FF M4Z28-BR00SH1 STM32C011F4P6
2023-6-8M50-3300842
优势库存
2022-8-5M50-3530442
M50-3530442
2022-6-27M5216FP CFOJ
https://hch01.114ic.com/
2020-11-13M51995AFP#CF0J，M51V17400D-10，M52018FP，M5203A1，M5203FP
M51995AFP#CF0J，M51V17400D-10，M52018FP，M5203A1，M5203FP
2020-3-9M51995AFP
M51995AFP，全新原装当天发货或门市自取0755-82732291.
2019-11-14
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