M48Z12价格

参考价格:¥36.6008

型号:M48Z12-150PC1 品牌:STMicroelectronics 备注:这里有M48Z12多少钱,2025年最近7天走势,今日出价,今日竞价,M48Z12批发/采购报价,M48Z12行情走势销售排行榜,M48Z12报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M48Z12

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

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STMICROELECTRONICS
M48Z12

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M48Z12

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M48Z12

5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Kbit2Kbx8ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM

SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM

文件:343.95 Kbytes Page:22 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWERSRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM

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STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 16KBIT PAR 24PCDIP 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:托盘 描述:IC NVSRAM 16KBIT PAR 24PCDIP 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M48Z12产品属性

  • 类型

    描述

  • 型号

    M48Z12

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    5 V, 16 Kbit(2 Kb x 8) ZEROPOWER? SRAM

更新时间:2025-7-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
DIP24
100000
代理渠道/只做原装/可含税
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法
25+
DIP24
54658
百分百原装现货 实单必成
ST
24+
DIP24
39500
进口原装现货 支持实单价优
ST
1950+
DIP24
6852
只做原装正品现货!或订货假一赔十!
ST
06+;0615+
DIP
1285
一级代理,专注军工、汽车、医疗、工业、新能源、电力
STM
2018+
26976
代理原装现货/特价热卖!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法半导体
23+
PCDIP-24
12700
买原装认准中赛美
ST
22+
32PMDIP Module
9000
原厂渠道,现货配单

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