M48Z12价格

参考价格:¥36.6008

型号:M48Z12-150PC1 品牌:STMicroelectronics 备注:这里有M48Z12多少钱,2026年最近7天走势,今日出价,今日竞价,M48Z12批发/采购报价,M48Z12行情走势销售排行榜,M48Z12报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M48Z12

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

M48Z12

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

M48Z12

5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

M48Z12

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

M48Z12

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:343.95 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半导体

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 16KBIT PAR 24PCDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

M48Z12产品属性

  • 类型

    描述

  • 型号

    M48Z12

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    5 V, 16 Kbit(2 Kb x 8) ZEROPOWER? SRAM

更新时间:2026-1-28 17:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
21+
PCDIP-24
8860
只做原装,质量保证
STMicroelect
23+
32-DIPModul
65480
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
25+23+
DIP-32
35282
绝对原装正品全新进口深圳现货
ST
25+
DIP24
15000
一级代理原装现货
ST
24+
DIP24
39500
进口原装现货 支持实单价优
ST
25+
QFP
3200
全新原装、诚信经营、公司现货销售!
ST
05+
原厂原装
53
只做全新原装真实现货供应
STMicroelectronics
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ST
DIP24
1500
一级代理 原装正品假一罚十价格优势长期供货

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