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M48Z12价格

参考价格:¥36.6008

型号:M48Z12-150PC1 品牌:STMicroelectronics 备注:这里有M48Z12多少钱,2026年最近7天走势,今日出价,今日竞价,M48Z12批发/采购报价,M48Z12行情走势销售排行榜,M48Z12报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M48Z12

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

M48Z12

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

M48Z12

5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

M48Z12

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

M48Z12

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

16 Kbit 2Kb x 8 ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM

Description The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory so

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

SUMMARY DESCRIPTION The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The M48Z129Y/V directly replaces industry standar

STMICROELECTRONICS

意法半导体

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:343.95 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半导体

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM

文件:178.57 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5 V, 16 Kbit (2 Kb x 8) ZEROPOWER짰 SRAM

文件:335.4 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 16KBIT PAR 24PCDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

M48Z12产品属性

  • 类型

    描述

  • 型号

    M48Z12

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    5 V, 16 Kbit(2 Kb x 8) ZEROPOWER? SRAM

更新时间:2026-3-17 19:31:00
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绝对原装正品全新进口深圳现货
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