型号 功能描述 生产厂家&企业 LOGO 操作
M48Z128

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M48Z128

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M48Z128

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 1MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 1MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M48Z128产品属性

  • 类型

    描述

  • 型号

    M48Z128

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Mbit 128Kb x8 ZEROPOWER SRAM

更新时间:2024-4-26 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
DIP32
20000
全新原装假一赔十
ST
2020+
DIP-32
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ST(意法)
23+
NA/
8735
原厂直销,现货供应,账期支持!
ST
97+
DIP32
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
17+
DIP32
9988
只做原装进口,自己库存
ST/意法
22+
N
28000
原装现货只有原装.假一罚十
ST/意法
20+
DIP
9850
只做原装正品假一赔十为客户做到零风险!!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/STMicroelectronics/意法半导
21+
DIP
5
优势代理渠道,原装正品,可全系列订货开增值税票
ST
2020+
DIP
35000
100%进口原装正品公司现货库存

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