型号 功能描述 生产厂家 企业 LOGO 操作
M48Z128Y

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

M48Z128Y

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

M48Z128Y

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 1MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 1MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

STMICROELECTRONICS

意法半导体

M48Z128Y产品属性

  • 类型

    描述

  • 型号

    M48Z128Y

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    5.0V OR 3.3V, 1 Mbit(128 Kbit x 8) ZEROPOWER?? SRAM

更新时间:2025-10-4 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+23+
DIP
36975
绝对原装正品全新进口深圳现货
ST
25+
标准封装
18000
原厂直接发货进口原装
ST
2025+
DIP-32
32560
原装优势绝对有货
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
23+
DIP
5000
原装正品,假一罚十
ST
24+
DIP
551
NA
25+
NA
7
全新原装正品支持含税
STMicroelectronics
18+
ICNVSRAM1MBIT85NS32DIP
6800
公司原装现货
ST
25+
DIP32
11451
只做原装进口!正品支持实单!
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

M48Z128Y数据表相关新闻