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M45PE80价格
参考价格：￥6.1231
型号：M45PE80-VMN6P 品牌：MICRON 备注：这里有M45PE80多少钱，2025年最近7天走势，今日出价，今日竞价，M45PE80批发/采购报价，M45PE80行情走势销售排行榜，M45PE80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M45PE80 | 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX |   | |
M45PE80 | 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | |
M45PE80 | 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | |
M45PE80 | 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface | STMICROELECTRONICS 意法半导体 | | |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr | NUMONYX | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
IC FLASH 8M SPI 75MHZ 8VFQFPN | Micron 美光 | | ||
Serial NOR Flash | Micron 美光 | | ||
封装/外壳：8-VDFN 裸露焊盘 包装：卷带（TR） 描述：IC FLASH 8MBIT SPI 75MHZ 8VFQFPN 集成电路（IC） 存储器 | Alliance | | ||
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 8MBIT SPI 75MHZ 8VDFPN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface 文件：373.01 Kbytes Page：47 Pages | STMICROELECTRONICS 意法半导体 | |
M45PE80产品属性
- 类型
描述
- 型号
M45PE80
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
SOP-8 |
6825 |
百分百原装正品,可原型号开票 |
|||
MICRON |
24+ |
SOP-8 |
2747 |
MICRON专营原装进口现货 |
|||
Micron |
2450+ |
SOP8 |
6541 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST/意法 |
24+ |
SOP-8 |
7600 |
全新原装现货特价销售,欢迎来电查询 |
|||
MICRON |
21+ |
SOP |
2500 |
十年信誉,只做原装,有挂就有现货! |
|||
镁光 |
23+ |
SOP-8 |
1000 |
正规渠道,只有原装! |
|||
MICRON/美光 |
22+ |
NA |
3000 |
支持任何机构检测 只做原装正品 |
|||
MICRON/镁光 |
25+ |
SOP8 |
12500 |
专营美光原装现货 |
|||
MICRON/镁光 |
25+ |
SOP8 |
32360 |
MICRON/镁光全新特价M45PE80-VMW6TP即刻询购立享优惠#长期有货 |
|||
MICRON |
26+ |
SOP8 |
360000 |
原装现货 |
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DdatasheetPDF页码索引
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