型号 功能描述 生产厂家 企业 LOGO 操作
M45PE80-VMP6TP

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr

NUMONYX

M45PE80-VMP6TP

8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr

STMICROELECTRONICS

意法半导体

M45PE80-VMP6TP

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

文件:373.01 Kbytes Page:47 Pages

STMICROELECTRONICS

意法半导体

8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr

STMICROELECTRONICS

意法半导体

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr

NUMONYX

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr

NUMONYX

8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Summary description The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integr

STMICROELECTRONICS

意法半导体

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

文件:373.01 Kbytes Page:47 Pages

STMICROELECTRONICS

意法半导体

M45PE80-VMP6TP产品属性

  • 类型

    描述

  • 型号

    M45PE80-VMP6TP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

更新时间:2026-3-2 23:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
09+
SOP8-5.2
1470
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICRON/美光
24+
NA
20000
美光专营原装正品
ST
24+
原厂原封
6523
进口原装公司百分百现货可出样品
ST
25+
SOP
30000
原装正品公司现货,假一赔十!
ST
23+
SOP-8
12800
公司只有原装 欢迎来电咨询。
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
21+
SOP
10000
只做原装,质量保证
ST
26+
QFN
60000
只有原装 可配单
ST
23+
SOP
12800
正规渠道,只有原装!
ST
2021+
SOP
7600
原装现货,欢迎询价

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