M45PE40价格

参考价格:¥4.5557

型号:M45PE40-VMP6G 品牌:MICRON 备注:这里有M45PE40多少钱,2024年最近7天走势,今日出价,今日竞价,M45PE40批发/采购报价,M45PE40行情走势销售排行榜,M45PE40报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M45PE40

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M45PE40

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

NUMONYX

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:托盘 描述:IC FLASH 4MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

封装/外壳:8-VDFN 裸露焊盘 包装:托盘 描述:IC FLASH 4MBIT SPI 75MHZ 8VFQFPN 集成电路(IC) 存储器

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

M45PE40产品属性

  • 类型

    描述

  • 型号

    M45PE40

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

更新时间:2024-4-26 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
22+
SO8W
8000
原厂原装,实单加微信
ST?
23+
SO8W/MLP8?
20000
全新原装假一赔十
MICRON/美光
23+
9920
原装正品,支持实单
MICRON
22+
SOP8W
1200
长源创新-只做原装---假一赔十
MICRON
17+
SOP-8W
5000
MICRON专营原装进口现货
MICRON
22+
SOP8
7314
全新原装正品 现货 优势供应
ST
2020+
SOP85.2
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
micron(镁光)
23+
SOP
48902
正规渠道,大量现货,只等你来。
21+
SOT-223
30720
优势代理渠道,原装正品,可全系列订货开增值税票
MICRON/美光
21+
SOP8
6000
全新原装 公司现货 价格优

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