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位置：首页 > IC中文资料第8942页 > M45PE40

M45PE40价格

参考价格：￥4.5557

型号：M45PE40-VMP6G 品牌：MICRON 备注：这里有M45PE40多少钱，2025年最近7天走势，今日出价，今日竞价，M45PE40批发/采购报价，M45PE40行情走势销售排行榜，M45PE40报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M45PE40

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

STMICROELECTRONICS

意法半导体

M45PE40

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Micron

美光

M45PE40-VMN6G

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMN6P

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMN6TG

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMN6TP

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMP6

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMP6G

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMP6G

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMP6P

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMP6P

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMP6T

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMP6TG

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMP6TG

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMP6TP

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMP6TP

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6G

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMW6G

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6P

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6P

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMW6T

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6TG

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMW6TG

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6TP

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMW6TP

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40S-VMN6TP

Serial NOR Flash

Micron

美光

M45PE40S-VMN6TP TR

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FLASH 4MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器

ETC

知名厂家

M45PE40S-VMP6G

封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 4MBIT SPI 75MHZ 8VFQFPN 集成电路（IC） 存储器

ETC

知名厂家

M45PE40产品属性

  • 类型

    描述

  • 型号

    M45PE40

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

M45PE40供应商更多...

更新时间：2025-10-28 9:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市瑞祥辉半导体有限公司
M45PE40-VMW6G
ST
2308+
SOP85.2
4852
十年专业专注 优势渠道商正品保证公司现货
询价
深圳市博中泰实业有限公司
M45PE40-VMW6TG其他被动元件
MICRON/美光
24+
SOP-8W
60000
询价
深圳市昌和盛利电子有限公司
M45PE40-VMN6
ST
NEW
SO8N
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
询价
深圳市凯睿晟科技有限公司
M45PE40-VMW6TG
ST/意法
21+
SOP-8
20000
百域芯优势 实单必成 可开13点增值税发票
询价
柒号芯城电子商务(深圳)有限公司
M45PE40-VMN6TP
MICRON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市维基鸿电子有限公司
M45PE40-VMW6G
ST/意法
25+
SOP-8
10000
全新原装现货库存
询价
深圳市宏世佳电子科技有限公司
M45PE40-VMW6G
ST
2025+
SOP-8
5185
全新原厂原装产品、公司现货销售
询价
深圳市朱博士电子科技有限公司
M45PE40-VMW6TG
micron(镁光)
2526+
SOP
50000
只做原装优势现货库存,渠道可追溯
询价
深圳市赛特兴科技有限公司
M45PE40
ST
23+
SOP8
16900
正规渠道,只有原装!
询价
深圳市宇创芯科技有限公司
M45PE40-VMW6TG
MICRON/镁光
24+
TQFP100
9600
原装现货,优势供应,支持实单!
询价

M45PE40芯片相关品牌

M45PE40规格书下载地址

M45PE40参数引脚图相关

M45PE40数据表相关新闻

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