型号 功能描述 生产厂家 企业 LOGO 操作
M45PE40-VMN6TP

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMN6TP

Serial NOR Flash

Micron

美光

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMN6TP产品属性

  • 类型

    描述

  • 型号

    M45PE40-VMN6TP

  • 功能描述

    IC FLASH 4MBIT 75MHZ 8SOIC

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    Forté™

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2025-10-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
标准封装
9548
全新原装正品/价格优惠/质量保障
MRON/美光
24+
NA/
300
优势代理渠道,原装正品,可全系列订货开增值税票
ST/意法
24+
NA
990000
明嘉莱只做原装正品现货
Micron
24+
SO8N
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MICRON
1722+
SOP8
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICRON/镁光
23+
SOIC
2630
原厂原装
MICRON/美光
24+
NA
20000
美光专营原装正品
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MICRON/美光
2223+
26800
只做原装正品假一赔十为客户做到零风险
MICRON
原厂封装
9800
原装进口公司现货假一赔百

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