型号 功能描述 生产厂家 企业 LOGO 操作
M45PE40-VMW6TP

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6TP

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

M45PE40-VMW6TP产品属性

  • 类型

    描述

  • 型号

    M45PE40-VMW6TP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

更新时间:2026-1-5 10:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
16+
QFP
2500
进口原装现货/价格优势!
ST
24+
SOP
16900
支持样品,原装现货,提供技术支持!
ST
25+
SOP
16900
原装,请咨询
ST
26+
SOP
60000
只有原装 可配单
ST
22+
QFN8
20000
公司只做原装 品质保障
WINBOND/华邦
23+
DIP8
69820
终端可以免费供样,支持BOM配单!
ST
24+
SOP-8
5000
全现原装公司现货
ST/意法
25+
SOP-8
54658
百分百原装现货 实单必成
ST
07+
8-VFQFN
4000
现货
ST
2025+
SOP-8
3645
全新原厂原装产品、公司现货销售

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