型号 功能描述 生产厂家&企业 LOGO 操作
M45PE40-VMW6TP

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

M45PE40-VMW6TP

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

numonyx

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

numonyx

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

STMICROELECTRONICS

意法半导体

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

NUMONYX

numonyx

M45PE40-VMW6TP产品属性

  • 类型

    描述

  • 型号

    M45PE40-VMW6TP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

更新时间:2025-8-7 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
7250
原装现货,当天可交货,原型号开票
ST?
23+
SO8W/MLP8?
20000
全新原装假一赔十
ST/意法
22+
SOP-8
100000
代理渠道/只做原装/可含税
ST/意法
25+
SOP-8
54658
百分百原装现货 实单必成
Numonyx
1726+
SOP8
6528
只做进口原装正品现货,假一赔十!
ST
07+
8-VFQFN
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROCHIP/微芯
23+
NA
98900
原厂原装正品现货!!
ST/意法
21+
SOP-8
3500
百域芯优势 实单必成 可开13点增值税发票
LATTICE
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
LATTICE
NA
5650
一级代理 原装正品假一罚十价格优势长期供货

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