型号 功能描述 生产厂家 企业 LOGO 操作
M36W0R6030B0ZAQE

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

M36W0R6030B0ZAQE产品属性

  • 类型

    描述

  • 型号

    M36W0R6030B0ZAQE

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit(4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit(512Kb x16) SRAM, Multi-Chip Package

更新时间:2025-10-5 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
ST
BGA
2350
一级代理 原装正品假一罚十价格优势长期供货
ST/意法
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST/意法
14+15+
BGA
16698
原装现货
ST/意法
25+
BGA
860000
明嘉莱只做原装正品现货
ST
24+
8000
原装现货,特价销售
ST
25+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
SST
原厂封装
9800
原装进口公司现货假一赔百
NA
25+
NA
1735
全新原装正品支持含税
ST
2023+
3000
进口原装现货

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