型号 功能描述 生产厂家 企业 LOGO 操作
M36W0R6030B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

M36W0R6030B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

STMICROELECTRONICS

意法半导体

M36W0R6030B0产品属性

  • 类型

    描述

  • 型号

    M36W0R6030B0

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit(4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit(512Kb x16) SRAM, Multi-Chip Package

更新时间:2025-11-21 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
BGA
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
ST
24+
8000
原装现货,特价销售
NA
25+
NA
1735
全新原装正品支持含税
ST
25+
BGA
16900
原装,请咨询
ST
25+23+
BGA
38519
绝对原装正品全新进口深圳现货
ST
25+
BGA
2140
全新原装!现货特价供应
ST/意法
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
BGA
16900
正规渠道,只有原装!
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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