| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W800B | 8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit1Mbx8or512Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit(1Mbx8or512Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
8Mbit(1Mbx8or512Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TSOP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
ST/意法 |
23+ |
TSOP-48 |
89630 |
当天发货全新原装现货 |
|||
ST |
19+20+ |
TSOP |
15546 |
全新原装房间现货 可长期供货 |
|||
ST/意法 |
22+ |
TSOP |
9000 |
原装正品 |
|||
ST |
9912+ |
TSSOP |
120 |
||||
ST |
23+ |
TSOP |
12335 |
||||
ST |
23+ |
SSOP |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
22+23+ |
SSOP48 |
47050 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
2022+ |
11 |
全新原装 货期两周 |
||||
ST/意法 |
23+ |
SSOP48 |
50000 |
全新原装正品现货,支持订货 |
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- M29W800B120M1R
- M29W800B100N6TR
- M29W800B100N6R
- M29W800B100N5TR
- M29W800B100N5R
- M29W800B100N1TR
- M29W800B100N1R
- M29W800B100M6TR
- M29W800B100M6R
- M29W800B100M5TR
- M29W800B100M5R
- M29W800B100M1TR
- M29W800B100M1R
- M29W800AT90ZA6T
- M29W800AT90ZA5T
- M29W800AT90ZA1T
- M29W800AT90N6T
- M29W800AT90N5T
- M29W800AT90N1T
- M29W800AT90M6T
- M29W800AT90M5T
- M29W800AT90M1T
- M29W800AT80ZA6T
- M29W800AT80ZA5T
- M29W800AT80ZA1T
- M29W800AT80N6T
- M29W800AT80N5T
- M29W800AT80N1T
- M29W800AT80M6T
- M29W800AT80M5T
- M29W800AT80M1T
- M29W800AT120ZA6T
- M29W800AT120ZA5T
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
M29W800B数据表相关新闻
M2S010-TQG144
ARM®Cortex®-M3嵌入式-片上系统(SoC)ICSmartFusion®2FPGA-10K逻辑模块166MHz144-TQFP（20x20）
2024-1-4M2GL150-FCVG484I
进口代理
2022-10-8M29W320ET70N6E 假一罚十
原装正品欢迎来电咨询！
2020-12-9M29W256GH70N6E公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-6-10M29W160ET-70N6公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-6-10M29W800DT70N6E天芯科技优势渠道积累-货源稳定-价格优势
深圳市天芯半导体科技有限公司0755-8272566017727837185（微信75056055）QQ：177691499
2019-2-26
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