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M29W400价格
参考价格：￥5.2990
型号：M29W400DB55N6E 品牌：Micron 备注：这里有M29W400多少钱，2025年最近7天走势，今日出价，今日竞价，M29W400批发/采购报价，M29W400行情走势销售排行榜，M29W400报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W400 | 4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M29W400 | 4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29W400产品属性
- 类型
描述
- 型号
M29W400
- 功能描述
闪存 512Kx8 or 256Kx16
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TSSOP48 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
19+ |
BGA |
9000 |
||||
ST |
24+ |
TSOP |
54000 |
全新原装现货特价销售,欢迎来电查询 |
|||
micron(镁光) |
24+ |
标准封装 |
57048 |
全新原装正品/价格优惠/质量保障 |
|||
ST |
23+ |
TSOP |
1800 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST |
98+ |
TSOP48 |
1335 |
全新原装进口自己库存优势 |
|||
ST |
17+ |
TSOP48 |
9988 |
只做原装进口,自己库存 |
|||
ST |
2025+ |
TSSOP |
3795 |
全新原装、公司现货热卖 |
|||
ST |
TSOP |
3350 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MICRON |
23+ |
TSOP-48 |
120 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
M29W400芯片相关品牌
M29W400规格书下载地址
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2019-2-26
DdatasheetPDF页码索引
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