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M29W400价格
参考价格：￥5.2990
型号：M29W400DB55N6E 品牌：Micron 备注：这里有M29W400多少钱，2024年最近7天走势，今日出价，今日竞价，M29W400批发/采购报价，M29W400行情走势销售排行榜，M29W400报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W400 | 4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M29W400 | 4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M29W400产品属性
- 类型
描述
- 型号
M29W400
- 功能描述
闪存 512Kx8 or 256Kx16
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
18+ |
TSOP48 |
2880 |
进口原装公司现货热卖 |
|||
ST |
23+ |
TSSOP48 |
1896 |
原包装原标签特价销售 |
|||
ST |
TSOP |
162 |
正品原装--自家现货-实单可谈 |
||||
MICRON |
2021+ |
BGA48 |
8630 |
镁光一级代理商, |
|||
MICRON |
12+ |
TSOP-48 |
120 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2023+ |
TSSOP |
3795 |
全新原厂原装产品、公司现货销售 |
|||
ST |
19+20+ |
TSOP |
15546 |
全新原装房间现货 可长期供货 |
|||
MICRON/美光 |
23+/24+ |
TSOP48 |
9865 |
进口原装/原盒原标/原厂渠道 |
|||
MICRON |
2020+ |
TSOP48 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
MICRON |
21+ |
TSOP-48 |
5000 |
专营原装正品现货,当天发货,可开发票! |
M29W400芯片相关品牌
M29W400规格书下载地址
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M29W400数据表相关新闻
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深圳市天芯半导体科技有限公司0755-8272566017727837185（微信75056055）QQ：177691499
2019-2-26
DdatasheetPDF页码索引
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