型号 功能描述 生产厂家 企业 LOGO 操作
M29W320FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

M29W320FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Micron

美光

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

Parallel NOR Flash

Micron

美光

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory

Summary description The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way

NUMONYX

numonyx

32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory

Summary description The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way

STMICROELECTRONICS

意法半导体

32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory

Summary description The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way

STMICROELECTRONICS

意法半导体

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory

Summary description The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way

NUMONYX

numonyx

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

M29W320FB产品属性

  • 类型

    描述

  • 型号

    M29W320FB

  • 功能描述

    IC FLASH 32MBIT 70NS 48TSOP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    Axcell™

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2025-9-22 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2016+
TSOP-48
3000
只做原装,假一罚十,公司可开17%增值税发票!
ST
09+
BGA
1200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST(MICRON镁光)
23+
TSOP48
30000
代理全新原装现货,价格优势
ST/意法
2450+
TSOP
6540
只做原装正品假一赔十为客户做到零风险!!
ST
23+
BGA
16900
正规渠道,只有原装!
ST/意法
23+
TSSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SST
原厂封装
9800
原装进口公司现货假一赔百
NUM
24+
4800
ST
23+24
TSSOP
29650
原装正品优势渠道价格合理.可开13%增值税发票
ST
23+
TSOP48
12800
公司只有原装 欢迎来电咨询。

M29W320FB数据表相关新闻