M29W320EB价格

参考价格:¥8.3402

型号:M29W320EB70N6E 品牌:Micron 备注:这里有M29W320EB多少钱,2025年最近7天走势,今日出价,今日竞价,M29W320EB批发/采购报价,M29W320EB行情走势销售排行榜,M29W320EB报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M29W320EB

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

M29W320EB

32Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Micron

美光

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical bloc

NUMONYX

numonyx

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 32MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

SLC 32M X16 TSOP

Micron

美光

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 32MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

PARALLEL 32M X16 TFBGA

Micron

美光

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

文件:887.12 Kbytes Page:46 Pages

STMICROELECTRONICS

意法半导体

M29W320EB产品属性

  • 类型

    描述

  • 型号

    M29W320EB

  • 制造商

    Micron Technology Inc

更新时间:2025-9-22 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
558
优势代理渠道,原装正品,可全系列订货开增值税票
micron(镁光)
24+
标准封装
9048
全新原装正品/价格优惠/质量保障
ST
2016+
BGA
3000
只做原装,假一罚十,公司可开17%增值税发票!
ST
23+
NA
20000
全新原装假一赔十
MICRON/美光
24+
TSOP48
7850
只做原装正品现货或订货假一赔十!
ST/意法
25+
TSOP48
54648
百分百原装现货 实单必成 欢迎询价
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
Numonyx
25+
TSOP48
18000
原厂直接发货进口原装
STM
14+
BGA
1400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICRON/美光
24+
NA
20000
美光专营原装正品

M29W320EB数据表相关新闻