位置：首页 > IC中文资料第11732页 > M29F040-90
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 |   | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 | STMICROELECTRONICS 意法半导体 | | ||
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY GENERAL DESCRIPTION The MX29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and | MCNIX ????????????旺宏电子 | | ||
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era | AMD 超威半导体 | | ||
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era | AMD 超威半导体 | | ||
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era | AMD 超威半导体 | | ||
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era | AMD 超威半导体 | |
M29F040-90产品属性
- 类型
描述
- 型号
M29F040-90
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMD |
24+ |
NA/ |
25 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
AMD |
10+ |
PLCC |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
TSOP32 |
16900 |
原装，请咨询 |
|||
STM; |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ST |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
ST |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
AMD |
23+ |
PLCC |
3600 |
绝对全新原装!现货!特价!请放心订购! |
|||
ST |
23+ |
TSOP32 |
16900 |
正规渠道,只有原装! |
|||
ST |
25+ |
PLCC |
3200 |
全新原装、诚信经营、公司现货销售! |
M29F040-90规格书下载地址
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