位置：首页 > IC中文资料第11805页 > M29F002
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F002 | 2Megabit(256Kx8-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29F002Familyconsistsof2Mbit,5.0volt-onlyFlashmemorydevicesorganizedas262,144bytes.TheAm29F002offerstheRESET#function,theAm29F002Ndoesnot.ThedataappearsonDQ7–DQ0.Thedeviceisofferedin32-pinPLCC,32-pinTSOP,and32-pinPDIPpackages.Th | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 |  |   |
M29F002 | 2M(256KX8)BIT ■GENERALDESCRIPTION TheMBM29F002TC/BCisa2M-bit,5.0V-OnlyFlashmemoryorganizedas256Kbytesof8bitseach.TheMBM29F002TC/BCisofferedina32-pinTSOP(I)and32-pinPLCCpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0 | FujitsuFujitsu Component Limited. 富士通富士通株式会社 |  | |
M29F002 | 2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29F002产品属性
- 类型
描述
- 型号
M29F002
- 制造商
MCNIX
- 制造商全称
Macronix International
- 功能描述
2M-BIT [256K x 8] CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron Technology Inc. |
21+ |
32-LCC(J 形引线) |
320 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ST/意法 |
2023+ |
PLCC32 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
ST/意法 |
25+ |
PLCC |
860000 |
明嘉莱只做原装正品现货 |
|||
ST |
TSOP32 |
0349+ |
493 |
全新原装进口自己库存优势 |
|||
ST |
23+ |
PLCC |
12335 |
||||
ST |
23+ |
PLCC-32 |
5000 |
原装正品,假一罚十 |
|||
ST |
98+ |
DIP/32 |
47 |
原装现货海量库存欢迎咨询 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
18+ |
PLCC |
19185 |
全新原装现货,可出样品,可开增值税发票 |
|||
STMICROELECT |
05+ |
原厂原装 |
10121 |
只做全新原装真实现货供应 |
M29F002芯片相关品牌
M29F002规格书下载地址
M29F002参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2BC_15
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002B-70XK1TR
- M29F002B-70P6TR
- M29F002B-70P1TR
- M29F002B-70N6TR
- M29F002B-70N1TR
- M29F002B-70K6TR
- M29F002B-70K1TR
- M29F002B-120XP6TR
- M29F002B-120XP1TR
- M29F002B-120XN6TR
- M29F002B-120XN1TR
- M29F002B-120XK6TR
- M29F002B-120XK1TR
- M29F002B-120P6TR
- M29F002B-120P1TR
- M29F002B-120N6TR
- M29F002B-120N1TR
- M29F002B-120K6TR
- M29F002B-120K1TR
- M29F002B
- M29DW641F90ZE6T
- M29DW641F90ZE6F
- M29DW641F90ZE6E
- M29DW641F90ZE6
- M29DW641F90ZE1T
- M29DW641F90ZE1F
- M29DW641F90ZE1E
- M29DW641F90ZE1
- M29DW641F90N6T
- M29DW641F90N6F
- M29DW641F90N6E
- M29DW641F90N6
- M29DW641F90N1T
- M29DW641F90N1F
- M29DW641F90N1E
- M29DW641F90N1
- M29DW641F70ZE6T
- M29DW641F70ZE6F
- M29DW641F70ZE6E
- M29DW641F70ZE6
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S_15
- M28S_13
- M28S_11
M29F002数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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