位置：首页 > IC中文资料第11805页 > M29F002
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F002 | 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 |   | |
M29F002 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29F002 Family consists of 2 Mbit, 5.0 volt-only Flash memory devices organized as 262,144 bytes. The Am29F002 offers the RESET# function, the Am29F002N does not. The data appears on DQ7– DQ0. The device is offered in 32-pin PLCC, 32-pin TSOP, and 32-pin PDIP packages. Th | AMD 超威半导体 | | |
M29F002 | 2M (256K X 8) BIT ■ GENERAL DESCRIPTION The MBM29F002TC/BC is a 2 M-bit, 5.0 V-Only Flash memory organized as 256K bytes of 8 bits each. The MBM29F002TC/BC is offered in a 32-pin TSOP(I) and 32-pin PLCC packages. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 | Fujitsu 富士通 | | |
M29F002 | 2M (256K X 8) BIT | Fujitsu 富士通 | | |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | |
M29F002产品属性
- 类型
描述
- 型号
M29F002
- 制造商
MCNIX
- 制造商全称
Macronix International
- 功能描述
2M-BIT [256K x 8] CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
PLCC-32 |
18000 |
原厂直接发货进口原装 |
|||
ST |
05+ |
原厂原装 |
4501 |
只做全新原装真实现货供应 |
|||
ST |
24+ |
PLCC32 |
10400 |
假一罚万ST一级代理分销原装现货特价 |
|||
ST |
新 |
81 |
全新原装 货期两周 |
||||
ST |
24+ |
PLCC |
50000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ST |
19+ |
DIP |
18974 |
||||
ST |
25+23+ |
PLCC-32 |
23623 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
24+ |
粒 |
10000 |
自己现货 |
|||
ST |
24+ |
12 |
原装现货,可开13%税票 |
||||
Micron Technology Inc. |
24+ |
32-PLCC(11.35x13.89) |
56200 |
一级代理/放心采购 |
M29F002规格书下载地址
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M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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