位置：首页 > IC中文资料第11805页 > M29F002
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F002 | 2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M29F002 | 2Megabit(256Kx8-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29F002Familyconsistsof2Mbit,5.0volt-onlyFlashmemorydevicesorganizedas262,144bytes.TheAm29F002offerstheRESET#function,theAm29F002Ndoesnot.ThedataappearsonDQ7–DQ0.Thedeviceisofferedin32-pinPLCC,32-pinTSOP,and32-pinPDIPpackages.Th | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 |  | |
M29F002 | 2M(256KX8)BIT ■GENERALDESCRIPTION TheMBM29F002TC/BCisa2M-bit,5.0V-OnlyFlashmemoryorganizedas256Kbytesof8bitseach.TheMBM29F002TC/BCisofferedina32-pinTSOP(I)and32-pinPLCCpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0 | FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社 |  | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M29F002产品属性
- 类型
描述
- 型号
M29F002
- 制造商
MCNIX
- 制造商全称
Macronix International
- 功能描述
2M-BIT [256K x 8] CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
PLCC32 |
3300 |
||||
Micron |
21+ |
32PLCC (11.35x13.89) |
13880 |
公司只售原装,支持实单 |
|||
ST |
2016+ |
PLCC |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/意法 |
23+ |
PLCC32 |
9980 |
原装正品，支持实单 |
|||
ST |
ROHS全新原装 |
原厂原封ZNDZ |
9782 |
原装现货在线咨询样品※技术支持专业电子元器件授权 |
|||
ST |
23+ |
DIP32 |
20000 |
全新原装假一赔十 |
|||
ST/意法 |
22+/23+ |
PLCC |
9800 |
原装进口公司现货假一赔百 |
|||
23+ |
N/A |
90650 |
正品授权货源可靠 |
||||
ST |
PLCC32 |
104 |
正品原装--自家现货-实单可谈 |
||||
ST/意法 |
22+ |
PLCC |
9800 |
只做原装正品假一赔十!正规渠道订货! |
M29F002芯片相关品牌
M29F002规格书下载地址
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M29F002数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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