| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F002B | 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 |   | |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B | STMICROELECTRONICS 意法半导体 | |
M29F002B产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
2Mb （256K x 8）
- 写周期时间 - 字，页：
70ns
- 访问时间：
70ns
- 存储器接口：
并联
- 电压 - 电源：
4.5V ~ 5.5V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
32-LCC（J 形引线）
- 供应商器件封装：
32-PLCC（11.35x13.89）
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
25+ |
TSOP-48 |
6843 |
样件支持,可原厂排单订货! |
|||
micron(镁光) |
25+ |
TSOP-48 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
Micron Technology Inc. |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
24+ |
3000 |
公司存货 |
|||||
ST |
25+23+ |
PLCC-32 |
23623 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
24+ |
PLCC32 |
10400 |
假一罚万ST一级代理分销原装现货特价 |
|||
ST/意法 |
22+ |
TSOP-32 |
3000 |
原装正品,支持实单 |
|||
ST/意法 |
21+ |
PLCC32 |
8080 |
只做原装,质量保证 |
M29F002B规格书下载地址
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- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S_15
- M28S_13
M29F002B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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